1. Fabrication and Development of Silicon Based Radiation-Sensing Field-Effect Transistor, BAP Project No: 2015.03.02.877, 2015- 2016 - Completed.

  2. Silicon Based LED Fabrication and Development, BAP Project No: 2014.03.02.750, 2014– 2015 - Completed.

  3. Fabrication and Characterizations of High Yield Solar Cells, BAP Project No: 2014.03.02.749, 2014– 2016 - Completed.

  4. Fabrication of Bipolar Junction Transistors (BJT) Used in Radiation Detection, BAP Project No: 2014.03.02.722, 2014– 2015 - Completed.

  5. Fabrication and Characterizations of High Yield Sm2O3, Lu2O3, La2O3 and ZrO2 Thin Films and MOS Capacitors for Semiconductor Based Dosimeters, BAP Project No: 2014.03.02.706, 2014– 2015 - Completed.

  6. The Investigation on Sensitivity of RadFET Dosimeters Using Monte Carlo Simulations, BAP Project No: 2014.03.02.705, 2014– 2015- Completed.

  7. Fabrication and Characterizations of PIN Photodiode for Photo Detector Applications, BAP Project No: 2017.03.02.1153, 15.03.2016 - Continue.

  8. Usability of Y2O3 ve ZrSiO4 as Dielectric Layers in MOS Based Technology, 2015- Continue, BAP Project No: 2015.03.02.870, 2015- 2016 - Completed.

  9. Packaging and Effects of Packaging Materials on Sensitivity of NürFET Sensors, BAP Project No: 2015.03.02.892, 2015 - 2016 - Completed.

  10. Comparison Between Radiation Sensitivity of Commercial and Domestic Radiation Sensors, BAP Project No: 2015.03.02.954, 2015 - 2016 - Completed.

  11. Usage of Rare- Earth Oxides in Radiation Dosimeters, BAP Project No: 2014.03.02.765, 2014– 2016 - Completed.

  12. Passivation of NürFET Types Radiation Sensors with Silicon Nitride (Si3N4), BAP Project No: 2015.03.02.820, 2015- 2016 - Completed.

  13. Fabrication of Domestic Solar Cell and Construction of its panel form, BAP Project No: 2016.03.02.1077, 2016 - Continue.

  14. Fabrication of Domestic Solar Cell and its Metal Contacts, BAP Project No: 2016.03.02.1077, 2016- Continue.

  15. Investigation of Radiation Response and usage for radiation sensors applications of HfZrO2 dielectric films, BAP Project No: 2016.03.03.1107, 07.11.2016 - Continue.

  16. Fabrication and Characterizations of High Yield Nd2O3, HfSiO4 Thin films for Radiation Sensors, BAP Project No: 2014.03.02.764, 2014 - 2016 - Completed.


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