Fabrication and Development of Silicon Based Radiation-Sensing Field-Effect Transistor, BAP Project No: 2015.03.02.877, 2015- 2016 - Completed.

Silicon Based LED Fabrication and Development, BAP Project No: 2014.03.02.750, 2014– 2015 - Completed.

Fabrication and Characterizations of High Yield Solar Cells, BAP Project No: 2014.03.02.749, 2014– 2016 - Completed.

Fabrication of Bipolar Junction Transistors (BJT) Used in Radiation Detection, BAP Project No: 2014.03.02.722, 2014– 2015 - Completed.

Fabrication and Characterizations of High Yield Sm₂O₃, Lu₂O₃, La₂O₃ and ZrO₂ Thin Films and MOS Capacitors for Semiconductor Based Dosimeters, BAP Project No: 2014.03.02.706, 2014– 2015 - Completed.

The Investigation on Sensitivity of RadFET Dosimeters Using Monte Carlo Simulations, BAP Project No: 2014.03.02.705, 2014– 2015- Completed.

Fabrication and Characterizations of PIN Photodiode for Photo Detector Applications, BAP Project No: 2017.03.02.1153, 15.03.2016 - Continue.

Usability of Y₂O₃ ve ZrSiO₄ as Dielectric Layers in MOS Based Technology, 2015- Continue, BAP Project No: 2015.03.02.870, 2015- 2016 - Completed.

Packaging and Effects of Packaging Materials on Sensitivity of NürFET Sensors, BAP Project No: 2015.03.02.892, 2015 - 2016 - Completed.

Comparison Between Radiation Sensitivity of Commercial and Domestic Radiation Sensors, BAP Project No: 2015.03.02.954, 2015 - 2016 - Completed.

Usage of Rare- Earth Oxides in Radiation Dosimeters, BAP Project No: 2014.03.02.765, 2014– 2016 - Completed.

Passivation of NürFET Types Radiation Sensors with Silicon Nitride (Si3N4), BAP Project No: 2015.03.02.820, 2015- 2016 - Completed.

Fabrication of Domestic Solar Cell and Construction of its panel form, BAP Project No: 2016.03.02.1077, 2016 - Continue.

Fabrication of Domestic Solar Cell and its Metal Contacts, BAP Project No: 2016.03.02.1077, 2016- Continue.

Investigation of Radiation Response and usage for radiation sensors applications of HfZrO2 dielectric films, BAP Project No: 2016.03.03.1107, 07.11.2016 - Continue.

Fabrication and Characterizations of High Yield Nd2O3, HfSiO4 Thin films for Radiation Sensors, BAP Project No: 2014.03.02.764, 2014 - 2016 - Completed.