The projects and thesis studies carried out within the Nuclear Radiation Detectors Application and Research Center started to bear their first prototype. As the first important output, NürFET chips, which are the product of chip processing technology known as p-channel MOSFET with a conventional SiO2 gate dielectric with increased sensitivity to radiation, were successfully produced.
In NürFET systems, dose measurement is made by utilizing the changes in the threshold voltage. The positive charges created by the radiation are trapped in the gate-oxide layer, causing a change in the threshold voltage (Vth). This change is calibrated according to the radiation dose and the amount of dose received is measured.
Technical Specifications of NürFET Chips
Base Material: Silicon Wafer
Die Size: 0.680x 0.680x 0.5 mm3
Dizayn: 2 pieces NürFET, one diyot in Single Chip
Diode Area: 0.05 mm2
Generation: 2017-2018
Sensitivity : 3.4 mV/Gy (100 nm gate oxide thick- NürFET)
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