| No | System ID (Adı) info: This email address is being protected from spambots. You need JavaScript enabled to view it. or This email address is being protected from spambots. You need JavaScript enabled to view it. | Photo (Görsel) |
| 1 |
Plasma Enhanced Atomic Layer Deposition- ALD (In Clean Room) (Plazma Arttırımlı Atomik Düzeyde Katman Kaplama) -Reactant: DI-water, Ozone -Precursor: Given by consumer |
|
| 2 |
DC/RF Sputtering (In Clean Room) (DC/RF Saçtırma Sistemi) - 4 inch target materials are used - Substrate heater up to 150 degree - Up to 8 inch wafer process (unifomity >89% ) - RF power up to 350 Watt
|
|
| 3 |
Electron Beam and Thermal Evaporator (Combine System) (In Clean Room) (Birleşik Elektron Demeti ve Termal Buharlaştırma Sistemi) - Various oxide and metal deposition - Target materials given by consumer - Up to 8 inch wafer process (unifomity >95% ) - Substrate heater up to 230 degree
|
|
| 4 |
Thermal Evaporator (In Clean Room) (Termal Buharlaştırma Sistemi) - Metal evaporation only - Target materials given by consumer
|
|
| 5 |
Wet/Dry Oxidation Furnace (In Clean Room) (Islak/Kuru Oksidasyon Fırını) -High Quality SiO2 deposition up to 1100 degree - 25 pieces wafer capability for 6 inch wafers
|
|
| 6 |
Boron/Phosphorus Thermal Doping Furnace (In Clean Room) (Termal Boron/Fosfor Katkılama Fırını) - Proces capability up to 1100 degree - 25 pieces wafer capability for 6 inch wafers
|
|
| 7 |
Programmable Annealing Furnace (In Clean Room) (Programlanabilir Tavlama Fırını) - Up to 1100 degree under O2, N2H2, N2 enviroment
|
|
| 8 |
Rapid Thermal Annealing-RTA (In Clean Room) (Hızlı Tavlama Fırını) - Ramp up rate up to 30 degree/second -8 inch wafers process up to 950 degree - Temperature unifomity > 95% - N2 and O2 inert enviroment
|
|
| 9 |
Mask Aligner (In Clean Room) (Maske Hizalama Sistemi) -Up to 8 icnh wafer -Compability for photolitography - Aling process capability up to 2 micron channel length and width |
|
| 10 |
Spic Coater (In Clean Room) (Spin Kaplama Cilazı) -6 inch and 8 inch process capability - Rotation up to 8000 rpm
|
|
| 11 |
Wet Benches (3 different) (In Clean Room) (Islak Tezgahlar 3 adet) -Semi-auto process capability -Connected with 18 Mohm DI-water and 6N dry N2
|
|
| 12 |
Four Point Probe Resistivity Measurement (In Clean Room) (Dört Nokta Prob Direnç Ölçer) - Semi-Auto system combined with Keithley units - Surface uniformity map can be studied |
|
| 13 |
PN Checker (In Clean Room) (PN Tip Ölçer) -Controlling the types of semicondutors (P or N type conductivity)
|
|
| 14 |
Spectroscopic Reflectometer (In Clean Room) (Spektroskopik Reflektometre) - Thickness of deposited layer speficication- 10 nm or higher -Reflection measurements can be performed
|
|
| 15 |
Probe Station with Keithley 4200 SCS (Keithley 4200 SCS ile Bütünleşik Prob İstasyonu) - I-V, C-V, CP measurement - Current limits to 10 pA for MOSFETs -Fast Capacitance Meas. - Measurements capability from -50 to 150 degree
|
 |
| 16 |
Keithley 2636B Sourcemeter -Test Fixture connected - Dual Channel connection -Perform Quick I-V characterization - 100mV to 40V voltage, 100nA to 10A current range |
|
| 17 |
Dicing Saw (Alttaş Kesme Sistemi) -Compable for Si wafers - Cutting precision 2-3 micrometer
|
|
| 18 |
Wire Bonder (Tel Bağlama Sistemi) -Al wire are used -Semi-auto process
|
|
| 19 |
Solar Simulator (Solar simülatörü) -Efficiency specificationf of Cells - I-V measurements under solar spec (Von, Isc etc.)
|
|
| 20 |
Lamination System (Laminasyon Sistemi) -Fabrication of Solar Panel - Up to 60 pieces of Cell laminations - Glass to glass or Glass to backsheet panel fabrication
|
 |
| 21 |
Some Other Tools - Oscilloscope (Tektronix ) - Workstation (128 GB RAM, 4x2.5Ghz Xeon processor with Linux) - Ph/resistivity meters of liquids - DI-water (18 M-ohm) purification - N2 purification system
|
